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1. product profile 1.1 general description silicon monolithic microwave in tegrated circuit ( mmic) wideband amplif ier with internal matching circuit in a 6-pin sot363 plastic smd package. 1.2 features and benefits ? internally matched to 50 ? a gain of 31.1 db at 500 mhz ? output power at 1 db gain compression = 4 dbm ? supply current = 16.0 ma at a supply voltage of 2.5 v ? reverse isolation > 52 db up to 750 mhz ? good linearity with low second order and third order products ? noise figure = 3.2 db at 500 mhz ? unconditionally stable (k > 1) ? no output inductor required 1.3 applications ? lnb if amplifiers ? general purpose low noise wideband amplifier for frequencies between dc and 750 mhz 2. pinning information BGA2870 mmic wideband amplifier rev. 2 ? 29 april 2011 product data sheet table 1. pinning pin description simplified outline graphic symbol 1v cc 2, 5 gnd2 3rf_out 4 gnd1 6rf_in 13 2 4 5 6 sym05 2 1 3 2, 5 6 4
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 2 of 18 nxp semiconductors BGA2870 mmic wideband amplifier 3. ordering information 4. marking 5. limiting values 6. thermal characteristics 7. characteristics table 2. ordering information type number package name description version BGA2870 - plastic surface-mounted package; 6 leads sot363 table 3. marking type number marking code description BGA2870 yc* * = - : made in hong kong * = p : made in hong kong * = w : made in china * = t : made in malaysia table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage rf input ac coupled ? 0.5 3.6 v i cc supply current - 55 ma p tot total power dissipation t sp = 90 c-200mw t stg storage temperature ? 40 +125 c t j junction temperature - 125 c p drive drive power - ? 16.5 dbm table 5. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point p tot = 200 mw; t sp =90 c 300 k/w table 6. characteristics v cc = 2.5 v; z s = z l = 50 ; p i = ? 30 dbm; t amb = 25 c; measured on demo board; unless otherwise specified. symbol parameter conditions min typ max unit v cc supply voltage 2.3 2.5 2.7 v i cc supply current 13.5 16.0 17.1 ma
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 3 of 18 nxp semiconductors BGA2870 mmic wideband amplifier g p power gain f = 250 mhz 30.6 31.2 31.8 db f = 500 mhz 30.5 31.1 31.7 db f = 750 mhz 30.3 31.0 31.7 db rl in input return loss f = 250 mhz 25 27 29 db f = 500 mhz 202224db f = 750 mhz 151618db rl out output return loss f = 250 mhz 12 17 21 db f = 500 mhz 121721db f = 750 mhz 141516db isl isolation f = 250 mhz 50 70 91 db f = 500 mhz 406080db f = 750 mhz 51 52 105 db nf noise figure f = 250 mhz 2.6 3.1 3.6 db f = 500 mhz 2.8 3.2 3.7 db f = 750 mhz 3.3 3.7 4.1 db b ? 3db ? 3 db bandwidth 3 db below gain at 1 ghz 1.9 2.1 2.3 ghz k rollett stability factor f = 250 mhz 29 44 60 f = 500 mhz 9 14 18 f = 750 mhz 5 6 7 p l(sat) saturated output power f = 250 mhz 5 5 6 dbm f = 500 mhz 4 4 5 dbm f = 750 mhz 3 4 5 dbm p l(1db) output power at 1 db gain compression f = 250 mhz 4 5 5 dbm f = 500 mhz 3 4 5 dbm f = 750 mhz 2 4 5 dbm ip3 i input third-order intercept point p drive = ? 35 dbm (for each tone) f 1 = 250 mhz; f 2 = 251 mhz ? 18 ? 16 ? 14 dbm f 1 = 500 mhz; f 2 = 501 mhz ? 19 ? 17 ? 15 dbm f 1 = 750 mhz; f 2 = 751 mhz ? 20 ? 18 ? 16 dbm ip3 o output third-order intercept point p drive = ? 35 dbm (for each tone) f 1 = 250 mhz; f 2 =251mhz 131517dbm f 1 = 500 mhz; f 2 =501mhz 121416dbm f 1 = 750 mhz; f 2 = 751 mhz 11 13 15 dbm p l(2h) second harmonic output power p drive = ? 35 dbm f 1h = 250 mhz; f 2h =500mhz ? 38 ? 36 ? 34 dbm f 1h = 500 mhz; f 2h =1900mhz ? 38 ? 36 ? 34 dbm im2 second-order intermodulation distance p drive = ? 35 dbm (for each tone) f 1 = 250 mhz; f 2 =251mhz 252729dbc f 1 = 500 mhz; f 2 =501mhz 222426dbc table 6. characteristics ?continued v cc = 2.5 v; z s = z l = 50 ; p i = ? 30 dbm; t amb = 25 c; measured on demo board; unless otherwise specified. symbol parameter conditions min typ max unit
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 4 of 18 nxp semiconductors BGA2870 mmic wideband amplifier 8. application information figure 1 shows a typical application circuit for the BGA2870 mmic. the device is internally matched to 50 , and therefore does not need any external matching. the value of the input and output dc blocking capacitors c2 and c3 should not be more than 100 pf for applications above 100 mhz. however, when the device is operated below 100 mhz, the capacitor value sh ould be increased. the 22 nf supply decoupling capacitor c1 shou ld be located as close as possible to the mmic. the pcb top ground plane, connected to pins 2, 4 and 5 must be as close as possible to the mmic, preferably also be low the mmic. when using via holes, use multiple via holes as close as possible to the mmic. 8.1 application examples fig 1. typical appl ication circuit 001aaf76 1 rf_out rf_in gnd2 v s v s gnd1 rf output rf input c3 c2 c1 the mmic is very suitable as if amplifier in e.g. lnb?s. the excellent wideband characteristics make it an easy building block. as second amplifier after an lna, the mmic offers an easy matching, low noise solution. fig 2. application as if amplifier fig 3. application as rf amplifier 001aaf76 2 from rf circuit oscillator wideband amplifier to if circuit or demodulator mixer 001aaf76 3 antenna oscillator wideband amplifier lna to if circuit or demodulator mixer
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 5 of 18 nxp semiconductors BGA2870 mmic wideband amplifier 8.2 graphs t amb =25 c; i cc = 15.7 ma; v cc = 2.5 v; z 0 =50 . (1) f = 250 mhz (2) f = 500 mhz (3) f = 750 mhz fig 4. input reflection coefficient (s 11 ); typical values 001aan435 90 ? 90 5 0.5 0.2 +0.2 0 +2 +5 ? 5 ? 2 ? 0.2 +0.5 ? 0.5 +1 ? 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 ? 45 ? 135 45 135 180 0 (2) (3) (1)
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 6 of 18 nxp semiconductors BGA2870 mmic wideband amplifier t amb =25 c; i cc = 15.7 ma; v cc = 2.5 v; z 0 =50 . (1) f = 250 mhz (2) f = 500 mhz (3) f = 750 mhz fig 5. output reflec tion coefficient (s 22 ); typical values 001aan436 90 ? 90 5 0.5 0.2 +0.2 0 +2 +5 ? 5 ? 2 ? 0.2 +0.5 ? 0.5 +1 ? 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 ? 45 ? 135 45 135 180 0 (2) (1) (3)
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 7 of 18 nxp semiconductors BGA2870 mmic wideband amplifier p drive = ? 40 dbm; z 0 =50 . (1) v cc = 2.3 v; t amb = 85 c; i cc = 13.40 ma (2) v cc = 2.3 v; t amb = ? 40 c; i cc = 13.20 ma (3) v cc = 2.5 v; t amb = 25 c; i cc = 15.70 ma (4) v cc = 2.7 v; t amb = 85 c; i cc = 17.90 ma (5) v cc = 2.7 v; t amb = ? 40 c; i cc = 18.20 ma p drive = ? 40 dbm; z 0 =50 . (1) v cc = 2.3 v; t amb = 85 c; i cc = 13.40 ma (2) v cc = 2.3 v; t amb = ? 40 c; i cc = 13.20 ma (3) v cc = 2.5 v; t amb = 25 c; i cc = 15.70 ma (4) v cc = 2.7 v; t amb = 85 c; i cc = 17.90 ma (5) v cc = 2.7 v; t amb = ? 40 c; i cc = 18.20 ma fig 6. rollett stability factor as function of frequency; typical values fig 7. input return loss as function of frequency; typical values 001aan437 f (ghz) 03 2 1 10 2 10 10 3 k 1 (1) (2) (3) (4) (5) f (ghz) 03 2 1 001aan438 ? 20 ? 10 0 rl in (db) ? 30 (1) (2) (3) (4) (5)
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 8 of 18 nxp semiconductors BGA2870 mmic wideband amplifier p drive = ? 40 dbm; z 0 =50 . (1) v cc = 2.3 v; t amb = 85 c; i cc = 13.40 ma (2) v cc = 2.3 v; t amb = ? 40 c; i cc = 13.20 ma (3) v cc = 2.5 v; t amb = 25 c; i cc = 15.70 ma (4) v cc = 2.7 v; t amb = 85 c; i cc = 17.90 ma (5) v cc = 2.7 v; t amb = ? 40 c; i cc = 18.20 ma p drive = ? 40 dbm; z 0 =50 . (1) v cc = 2.3 v; t amb = 85 c; i cc = 13.40 ma (2) v cc = 2.3 v; t amb = ? 40 c; i cc = 13.20 ma (3) v cc = 2.5 v; t amb = 25 c; i cc = 15.70 ma (4) v cc = 2.7 v; t amb = 85 c; i cc = 17.90 ma (5) v cc = 2.7 v; t amb = ? 40 c; i cc = 18.20 ma fig 8. output return loss as function of frequency; typical values fig 9. insertion power gain as function of frequency; typical values f (ghz) 03 2 1 001aan439 ? 20 ? 10 0 rl out (db) ? 30 (1) (2) (3) (4) (5) 001aan440 f (ghz) 03 2 1 25 20 30 35 g p (db) 15 (1) (2) (3) (4) (5)
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 9 of 18 nxp semiconductors BGA2870 mmic wideband amplifier 8.3 tables p drive = ? 40 dbm; z 0 =50 . (1) v cc = 2.3 v; t amb = 85 c; i cc = 13.40 ma (2) v cc = 2.3 v; t amb = ? 40 c; i cc = 13.20 ma (3) v cc = 2.5 v; t amb = 25 c; i cc = 15.70 ma (4) v cc = 2.7 v; t amb = 85 c; i cc = 17.90 ma (5) v cc = 2.7 v; t amb = ? 40 c; i cc = 18.20 ma z 0 =50 . (1) v cc = 2.3 v; t amb = 85 c; i cc = 13.40 ma (2) v cc = 2.3 v; t amb = ? 40 c; i cc = 13.20 ma (3) v cc = 2.5 v; t amb = 25 c; i cc = 15.70 ma (4) v cc = 2.7 v; t amb = 85 c; i cc = 17.90 ma (5) v cc = 2.7 v; t amb = ? 40 c; i cc = 18.20 ma fig 10. isolation as function of frequency; typical values fig 11. noise figure as function of frequency; typical values 001aan441 f (ghz) 03 2 1 ? 40 ? 60 ? 20 0 isl (db) ? 80 (1) (2) (3) (4) (5) 001aan442 f (ghz) 03 2 1 4 3 5 6 nf (db) 2 (1) (2) (3) (4) (5) table 7. supply current over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 i cc supply current v cc = 2.3 v 13.20 13.30 13.40 ma v cc = 2.5 v 15.80 15.70 15.70 ma v cc = 2.7 v 18.20 18.00 17.90 ma table 8. second harmonic output power over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 p l(2h) second harmonic output power f = 250 mhz; p drive = ? 35 dbm v cc =2.3v ? 42 ? 37 ? 36 dbm v cc =2.5v ? 38 ? 36 ? 35 dbm v cc =2.7v ? 37 ? 36 ? 35 dbm f = 500 mhz; p drive = ? 35 dbm v cc =2.3v ? 42 ? 38 ? 35 dbm v cc =2.5v ? 38 ? 36 ? 34 dbm v cc =2.7v ? 36 ? 35 ? 33 dbm
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 10 of 18 nxp semiconductors BGA2870 mmic wideband amplifier table 9. input power at 1 db gain compression over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 p i(1db) input power at 1 db gain compression f = 250 mhz v cc =2.3v ? 27 ? 26 ? 26 dbm v cc =2.5v ? 26 ? 26 ? 26 dbm v cc =2.7v ? 26 ? 25 ? 25 dbm f = 500 mhz v cc =2.3v ? 27 ? 26 ? 27 dbm v cc =2.5v ? 27 ? 26 ? 26 dbm v cc =2.7v ? 27 ? 26 ? 26 dbm f = 750 mhz v cc =2.3v ? 27 ? 26 ? 27 dbm v cc =2.5v ? 27 ? 27 ? 27 dbm v cc =2.7v ? 27 ? 26 ? 27 dbm table 10. output power at 1 db gain compression over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 p l(1db) output power at 1 db gain compression f = 250 mhz v cc =2.3v 3 3 3 dbm v cc =2.5v 4 5 4 dbm v cc =2.7v 6 6 5 dbm f = 500 mhz v cc =2.3v 2 3 2 dbm v cc =2.5v 4 4 3 dbm v cc =2.7v 5 5 4 dbm f = 750 mhz v cc =2.3v 2 2 1 dbm v cc =2.5v 4 4 2 dbm v cc =2.7v 5 4 3 dbm
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 11 of 18 nxp semiconductors BGA2870 mmic wideband amplifier table 11. saturated output power over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 p l(sat) saturated output power f = 250 mhz v cc =2.3v 444dbm v cc =2.5v 555dbm v cc =2.7v 666dbm f = 500 mhz v cc =2.3v 333dbm v cc =2.5v 444dbm v cc =2.7v 555dbm f = 750 mhz v cc =2.3v 332dbm v cc =2.5v 443dbm v cc =2.7v 554dbm table 12. second-order intermodulation distance over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 im2 second-order intermodulation distance f 1 = 250 mhz; f 2 = 251 mhz; p drive = ? 35 dbm v cc =2.3v 31 2725dbc v cc =2.5v 29 2725dbc v cc =2.7v 29 2826dbc f 1 = 500 mhz; f 2 = 501 mhz; p drive = ? 35 dbm v cc =2.3v 27 2523dbc v cc =2.5v 26 2422dbc v cc =2.7v 25 2422dbc
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 12 of 18 nxp semiconductors BGA2870 mmic wideband amplifier table 13. output third-order intercept point over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 ip3 o output third-order intercept point f 1 =250mhz; f 2 =251mhz; p drive = ? 38 dbm v cc =2.3v 13 13 13 dbm v cc =2.5v 15 15 15 dbm v cc =2.7v 17 16 16 dbm f 1 =500mhz; f 2 =501mhz; p drive = ? 38 dbm v cc =2.3v 13 13 12 dbm v cc =2.5v 15 14 13 dbm v cc =2.7v 16 15 14 dbm f 1 =750mhz; f 2 =751mhz; p drive = ? 38 dbm v cc =2.3v 13 12 11 dbm v cc =2.5v 14 13 11 dbm v cc =2.7v 15 14 12 dbm table 14. ? 3 db bandwidth over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 b ? 3db ? 3 db bandwidth v cc = 2.3 v 2.19 2.09 1.96 ghz v cc = 2.5 v 2.12 2.05 1.91 ghz v cc = 2.7 v 2.07 2.00 1.87 ghz
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 13 of 18 nxp semiconductors BGA2870 mmic wideband amplifier 9. test information true size = 30 mm 30 mm. fig 12. pcb layout and demo board with components 001aal22 6 c2 c1 c3 ic1 30 mm 30 mm table 15. list of components used for the typical application component description value dimensions c1, c2 multilayer ceramic chip capacitor 100 pf 0603 c3 multilayer ceramic chip capacitor 22 nf 0603 ic1 BGA2870 mmic sot363
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 14 of 18 nxp semiconductors BGA2870 mmic wideband amplifier 10. package outline fig 13. package outline sot363 references outline version european projection issue date iec jedec jeita sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface-mounted package; 6 leads sot36 3 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 04-11-08 06-03-16
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 15 of 18 nxp semiconductors BGA2870 mmic wideband amplifier 11. abbreviations 12. revision history table 16. abbreviations acronym description dc direct current if intermediate frequency lna low-noise amplifier lnb low-noise block converter pcb printed-circuit board rf radio frequency smd surface mounted device table 17. revision history document id release date data sheet status change notice supersedes BGA2870 v.2 20110429 product data sheet - BGA2870 v.1 modifications: ? section 1.2 on page 1 : several values have been corrected. ? table 6 on page 2 : all values have been corrected. ? section 8.3 on page 9 : several values have been corrected. BGA2870 v.1 20110224 product data sheet - -
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 16 of 18 nxp semiconductors BGA2870 mmic wideband amplifier 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
BGA2870 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 29 april 2011 17 of 18 nxp semiconductors BGA2870 mmic wideband amplifier non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BGA2870 mmic wideband amplifier ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 29 april 2011 document identifier: BGA2870 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . 2 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 application information. . . . . . . . . . . . . . . . . . . 4 8.1 application examples . . . . . . . . . . . . . . . . . . . . 4 8.2 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.3 tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 13 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 16 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 14 contact information. . . . . . . . . . . . . . . . . . . . . 17 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

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